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IRF3315

International Rectifier
Part Number IRF3315
Manufacturer International Rectifier
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description PD -91623A APPROVED l l l l l IRF3315 D HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C O...
Datasheet PDF File IRF3315 PDF File

IRF3315
IRF3315


Overview
PD -91623A APPROVED l l l l l IRF3315 D HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 150V G S RDS(on) = 0.
07Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial a...



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