DatasheetsPDF.com

IPU13N03LA

Infineon Technologies AG
Part Number IPU13N03LA
Manufacturer Infineon Technologies AG
Description OptiMOS 2 Power-Transistor
Published Apr 16, 2005
Detailed Description IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified accor...
Datasheet PDF File IPU13N03LA PDF File

IPU13N03LA
IPU13N03LA

Overview
IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated 1) Product Summary V DS R DS(on),max (SMD version) ID 25 13 30 V mΩ A P-TO252-3-11 P-TO251-3-21 Type IPD13N03LA IPU13N03LA Package P-TO252-3-11 P-TO251-3-21 Ordering Code Q67042-S4159 Q67042-S4160 Marking 13N03LA 13N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 30 30 210 60 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=24 A, R G...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)