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IPB14N03LA

Infineon Technologies AG
Part Number IPB14N03LA
Manufacturer Infineon Technologies AG
Description OptiMOS 2 Power-Transistor
Published Apr 16, 2005
Detailed Description IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-c...
Datasheet PDF File IPB14N03LA PDF File

IPB14N03LA
IPB14N03LA


Overview
IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 13.
6 30 V mΩ A P-TO262-3-1 P-TO220-3-1 Type IPB14N03LA IPI14N03LA IPP14N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code Q67042-S4156 Q67042-S4157 Q67042-S4158 Marking 14N03LA 14N03LA 14N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C2) I D=24 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 210 60 6 ±20 46 -55 .
.
.
175 55/175/56 mJ kV/µs V W °C Unit A Rev.
1.
3 page 1 2003-12-18 IPB14N03LA IPI14N03LA, IPP14N03LA Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=20 A V GS=4.
5 V, I D=20 A, SMD version V GS=10 V, I D=30 A V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.
2 1.
6 0.
1 2 1 µA V 3.
2 62 40 K/W Values typ.
max.
Unit 17...


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