DatasheetsPDF.com

SI2301DS

Vishay Siliconix
Part Number SI2301DS
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.130 @ VGS = - 4.5 ...
Datasheet PDF File SI2301DS PDF File

SI2301DS
SI2301DS


Overview
Si2301DS Vishay Siliconix P-Channel 1.
25-W, 2.
5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.
130 @ VGS = - 4.
5 V 0.
190 @ VGS = - 2.
5 V ID (A) - 2.
3 - 1.
9 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301DS-T1 S 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 20 "8 - 2.
3 - 1.
5 - 10 - 1.
6 1.
25 0.
8 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a.
Pulse width limited by maximum junction temperature.
b.
Surface Mounted on FR4 Board, t v 5 sec.
c.
Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Document Number: 70627 S-31990—Rev.
E, 13-Oct-03 www.
vishay.
com RthJA Symbol Limit 100 166 Unit _C/W 1 Si2301DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.
5 V VDS v - 5 V, VGS = - 2.
5 V VGS = - 4.
5 V, ID = - 2.
8 A VGS = - 2.
5 V, ID = - 2.
0 A VDS = - 5 V, ID = - 2.
8 A IS = - 1.
6 A, VGS = 0 V -6 -3 0.
105 0.
145 6.
5 - 0.
80 - 1.
2 0.
130 0.
190 - 20 - 0.
45 "100 -1 - 10 V nA mA Symbol Test Conditions Min Typ Max Unit On State Drain Currenta On-State ID(on) D( ) A Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage rDS(on) DS( ) gfs VSD W S V Dynamicb Total Gate Ch...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)