P-Channel MOSFET - Vishay Siliconix
Description
P-Channel 20 V (D-S) MOSFET
Si1031R/X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
8 at VGS = - 4.
5 V
12 at VGS = - 2.
5 V - 20
15 at VGS = - 1.
8 V
20 at VGS = - 1.
5 V
ID (mA) - 150 - 125 - 100 - 30
SC-75A or SC-89
G1
SC-75A (SOT - 416): Si1031R
SC-89 (SOT - 490): Si1031X 3D
S2
Marking Code: H
Top View
Ordering Information: Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • High-Side Switching • Low On-Resistance: 8 • Low Threshold: 0.
9 V (typ.
) • Fast Switching Speed: 45 ns • TrenchFET® Power MOSFETs: 1.
5 V Rated • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers
BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Si1031R
Si1031X
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS ± 6
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta
TA = 25 °C TA = 85 °C
ID IDM
- 150
- 140
- 110
- 100
- 500
- 165
- 155
- 150
- 125
- 600
Continuous Source Current (Diode Conduction)a
IS - 250 - 200 - 340 - 240
Maximum Power Dissipationa
TA = 25 °C TA = 85 °C
PD
280 145
250 130
340 170
300 150
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
Notes: a.
Surface mounted on FR4 board.
Unit V
mA
mW °C V
Document Number: 71171 S10-2544-Rev.
D, 08-Nov-10
www.
vishay.
com 1
Si1031R/X
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static Gate Threshold Voltage Gate-Body...
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