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SGM2016AN

Part Number	SGM2016AN
Manufacturer	Sony Corporation
Description	GaAs N-channel Dual-Gate MES FET
Published	Apr 8, 2005
Detailed Description	SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Descri...
Datasheet	SGM2016AN PDF File

Overview

SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.
Features • Ultra-small package • Low voltage operation • Low noise NF = 1.
2dB (typ.
) at 900MHz • High gain Ga = 21dB (typ.
) at 900MHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratin...

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