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SGM2014AN

Part Number	SGM2014AN
Manufacturer	Sony Corporation
Description	GaAs N-channel Dual-Gate MES FET
Published	Apr 8, 2005
Detailed Description	SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Descri...
Datasheet	SGM2014AN PDF File

Overview

SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
Features • Ultra small package • Low voltage operation • Low noise: NF = 1.
5dB (typ.
) at 900MHz • High gain: Ga = 18dB (typ.
) at 900MHz • Low cross-modulation • High stability • Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (T...

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