TRANSISTORS N-CHANNEL - International Rectifier
Description
PD - 90337G
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
IRF150 JANTX2N6764
THRU-HOLE (TO-204AA/AE)
JANTXV2N6764
[REF:MIL-PRF-19500/543]
Product Summary
100V, N-CHANNEL
Part Number BVDSS RDS(on) ID
IRF150
100V 0.
055Ω 38A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂
TJ TSTG
Operating Junction Storage Temperature Range Lead Temperature Weight
Units
38 24 A
152
150 W
1.
2 W/°C
±20 V
150 mJ
38 A
15 mJ
5.
5 -55 to 150
V/ns oC
300 (0.
063 in.
(1.
6mm) from case for 10s) 11.
5 (typical)
g
For footnotes refer to the last page
www.
irf.
com
1
08/21/01
IRF150
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage
RDS(on)
Static Drain-to-Source On-State Resistance
V...
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