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JANSR2N7397

Intersil Corporation
Part Number JANSR2N7397
Manufacturer Intersil Corporation
Description 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET
Published Apr 7, 2005
Detailed Description JANSR2N7397 Formerly FSL234R4 June 1998 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete ...
Datasheet PDF File JANSR2N7397 PDF File

JANSR2N7397
JANSR2N7397

Overview
JANSR2N7397 Formerly FSL234R4 June 1998 4A, 250V, 0.
610 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially designed and processed to be radiat...


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