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J112

NXP
Part Number J112
Manufacturer NXP
Description N-channel silicon field-effect transistors
Published Apr 5, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification Fi...
Datasheet PDF File J112 PDF File

J112
J112

Overview
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes.
They are intended for applications such as analog switches, choppers, commutators etc.
FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable.
1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.
1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA J111 Drain-source voltage Drain current VDS = 15 V; VGS = 0 Total power dissipation up to Tamb = 50 °C Gate-source cut-off voltage VDS = 5 V; ID = 1 µA Drain-source on-state resistance VDS = 0.
1 V; VGS = 0 RDS on max.
30 50 100 Ω −VGS off min.
max.
3 10 1 5 0.
5 3 V V Ptot max.
400 400 400 mW IDSS min.
20 5 2 mA ±VDS max.
40 J112 40 J113 40 V July 1993 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate forward current (DC) Total power dissipation up to Tamb = 50 °C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified J111 Gate reverse current −VGS = 15 V; VDS = 0 Drain cut-off current VDS = 5 V; −VGS = 10 V Drain saturation current VDS = 15 V; VGS = 0 Gate-source breakdown voltage −IG = 1 µA; VDS = 0 Gate-source cut-off voltage VDS = 5 V; ID = 1 µA Drain-source on-state resistance VDS = 0.
1 V; VGS = 0 RDSon max.
30 −VGS off min.
max.
3 10 −V(BR)GSS min.
40 IDSS min.
20 −IDSX max.
1 −IGSS max.
1 Rth j-a = Ptot Tstg Tj max.
max.
±VDS −V...


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