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IXFN48N50Q

IXYS Corporation
Part Number IXFN48N50Q
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs Q-Class
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q ID25 RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £...
Datasheet PDF File IXFN48N50Q PDF File

IXFN48N50Q
IXFN48N50Q

Overview
HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q ID25 RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 44N50 48N50 44N50 48N50 Maximum Ratings 500 500 ±20 ±30 44 48 176 192 48 60 2.
5 5 500 -55 to +150 150 -55 to +150 V V V V A A A A A mJ mJ V/ns W °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s 2500 3000 1.
5/13 1.
5/13 30 Mounting torque Terminal connection torque Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Unclamped Inductive Switching (UIS) rated • Low RDS (on) • Fast intrinsic diode • International standard package • miniBLOC with Aluminium nitride isolation for low thermal resistance • Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) • Molding epoxies meet UL 94 V-0 flammability classification Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 98715 (03/30/00) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
500 2.
0 4.
0 ±100 TJ = 25°C TJ = 125°C 100 2 120 100 V V nA mA mA mW mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 ID25 44N50 48N50 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS ...


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