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ISL9N312AD3ST

Fairchild Semiconductor

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs - Fairchild Semiconductor


ISL9N312AD3ST
ISL9N312AD3ST

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Description
ISL9N312AD3 / ISL9N312AD3ST June 2002 ISL9N312AD3 / ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
010Ω (Typ), VGS = 10V • rDS(ON) = 0.
017Ω (Typ), VGS = 4.
5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.
5nC • CISS (Typ) = 1450pF Applications • DC/DC converters D D G S G D-PAK TO-252 (TO-252) I-PAK (TO-251AA) G D S S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.
5V) Continuous (TC = 25oC, VGS = 10V, RθJA = 52oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 50 32 11 Figure 4 75 0.
5 -55 to 175 A A A A W W/oC o Ratings 30 ±20 Units V V C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-251, TO-252 Thermal Resistance Junction to Ambient TO-251, TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2 100 52 o C/W C/W oC/W o Package Marking and Ordering Information Device Marking N312AD N312AD Device ISL9N312AD3ST ISL9N312AD3 Package TO-252AA TO-251AA Reel Size 330mm Tube Tape Width 16mm NA Quantity 2500 units 50 units ©2002 Fairchild Semiconductor Corporation ISL9N312AD3 / ISL9N312AD3ST Rev C ISL9N312AD3 / ISL9N312AD3ST Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V VGS = ±20V TC = 150o 30 1 2...



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