Switching Application - Fairchild Semiconductor
Description
KSR2009
KSR2009
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.
7KΩ) • Complement to KSR1009
1
TO-92
1.
Emitter 2.
Collector 3.
Base
Equivalent Circuit C
R B
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -5 -100 300 150 -55 ~ 150
E
Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC= -100µA, IE=0 IC= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 3.
2 5.
5 200 4.
7 6.
2 100 Min.
-40 -40 -0.
1 600 -0.
3 V pF MHz KΩ Typ.
Max.
Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev.
A2, October 2002
KSR2009
Typical Characteristics
10k
-1000
VCE(sat)[mV], SATURATION VOLTAGE
VCE = - 5V R = 4.
7K
IC = 10IB R = 4.
7k
hFE, DC CURRENT GAIN
1k
-100
100
-10
10 -0.
1
-1 -1 -10 -100 -1 -10 -100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1.
DC current Gain
Figure 2.
Collector-Emitter Saturation Voltage
400
350
PC[mW], POWER DISSIPATION
300
250
200
150
100
50
0 0 25 50
o
75
100
125
150
175
T a[ C], AMBIENT TEMPERATURE
Figure 3.
Power Derating
©2002 Fairchild Semiconductor Corporation
Rev.
A2, October 2002
KSR2009
Package Dimensions
TO-92
4.
58 –0.
15
+0.
25
0.
46
14.
47 ±0.
40
±0.
10
4.
58 ±0.
20
1.
27TYP [1.
27 ±0.
20] 3.
60
±0.
20
1.
27TYP [1.
27 ±0.
20]
0.
38 –0.
05
+0.
10
3.
86MAX
1.
02 ±0.
10
0.
38 –0.
05
+0.
1...
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