High Voltage Transistor - Fairchild Semiconductor
Description
KSP44/45
KSP44/45
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V • Collector Power Dissipation: PC (max)=625mW
1
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP44 : KSP45 VCEO Collector-Emitter Voltage : KSP44 : KSP45 VEBO IC PC PC TJ Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25°C) Collector Power Dissipation (TC=25°C) Junction Temperature
1.
Emitter 2.
Base 3.
Collector
Value 500 400 400 350 6 300 625 1.
5 150
Units V V V V V mA mW W °C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP44 : KSP45 * Collector -Emitter Breakdown Voltage : KSP44 : KSP45 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP44 : KSP45 ICES Collector Cut-off Current : KSP44 : KSP45 IEBO hFE Emitter Cut-off Current * DC Current Gain VCE=400V, IB=0 VCE=320V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=1mA, IB=0.
1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCB=20V, IE=0, f=1MHz 40 50 45 40 0.
5 0.
5 0.
1 200 µA µA µA VCB=400V, IE=0 VCB=320V, IE=0 0.
1 0.
1 µA µA Test Condition IC=100µA, IB=0 Min.
500 400 IC=1mA, IB=0 400 350 IE=100µA, IC=0 6 V V V Max.
Units V V
BVCEO
BVEBO ICBO
VCE (sat)
* Collector-Emitter Saturation Voltage
0.
4 0.
5 0.
75 0.
75 7
V V V V pF
VBE (sat) Cob
* Base-Emitter Saturation Voltage Output Capacitance
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev.
A2, November 2002
KSP44/45
Typical Characteristics
160
10
VCE=10V
140 120
VCC=150V IC/IB=10 Ta=25℃ VBE(off)=4V
hFE, DC CURRENT GAIN
100
60 40 20 0 -20 -40 1 10 100 1000 10000
t[us], TIME
80
1
tf td
0.
1 1 10 100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1.
DC current Gain
Figure 2.
Turn-On Switching Times
100
1000
...
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