DatasheetsPDF.com

KM44S32030

Part Number	KM44S32030
Manufacturer	Samsung semiconductor
Description	8M x 4Bit x 4 Banks Synchronous DRAM
Published	Apr 4, 2005
Detailed Description	KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with mult...
Datasheet	KM44S32030 PDF File

Overview

KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS Latency (2 & 3) -.
Burst Length (1, 2, 4, 8) -.
Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst Read Single-bit Write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Sy...

Similar Datasheet

KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM - Samsung semiconductor
KM44S32030B 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL - Samsung semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)