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KM416V4004B

Samsung semiconductor
Part Number KM416V4004B
Manufacturer Samsung semiconductor
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out
Published Apr 4, 2005
Detailed Description KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of ...
Datasheet PDF File KM416V4004B PDF File

KM416V4004B
KM416V4004B


Overview
KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES • Part Identification - KM416V4004B/B-L(3.
3V, 8K Ref.
) - KM416V4104B/B-L(3.
3V, 4K Ref.
) • Extended Data Out Mode operation • 2 CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Fast parallel test mode capability • Self-refresh capability (L-ver only) • LVTTL(3.
3V) compatible inputs and outputs Unit : mW • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic TSOP(II) packages • +3.
3V±0.
3V power supply • Active Power Dissipation Speed -45 -5 -6 • Refresh Cycles Part NO.
KM416V4004B* KM416V4104B Refresh cycle 8K 4K Refresh time Normal 64ms L-ver 128ms RAS UCAS LCAS W 8K 360 324 288 4K 468 432 396 FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer VBB Generator * Access mode & RAS only refresh mode : 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.
) CAS-before-RAS & Hidden refresh mode : 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.
) • Performance Range Speed -45 -5 -6 Refresh Timer Refresh Control Refresh Counter Row Decoder DQ0 to DQ7 Memory Array 4,194,304 x 16 Cells OE DQ 8 to DQ15 tRAC 50ns 50ns 60ns tCAC 12ns 13ns 15ns tRC 74ns 84ns 1...


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