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KM416S8030B

Part Number	KM416S8030B
Manufacturer	Samsung semiconductor
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Published	Apr 4, 2005
Detailed Description	KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung El...
Datasheet	KM416S8030B PDF File

Overview

KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.
1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
1 Jun.
1999 KM416S8030B Revision History Revision 0.
0 (May 15, 1999) CMOS SDRAM • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
• Eliminated FREQUENCY vs.
PARAMETER RELATIONSHIP TABLE.
• Symbol Change Notice IIL IIL IOL Before Input leakage current (inputs) Input leakage current (I/O pins) Output open @ DC char...

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