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SSP4N60AS

Fairchild Semiconductor
Part Number SSP4N60AS
Manufacturer Fairchild Semiconductor
Description Advanced Power MOFET
Published Apr 4, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File SSP4N60AS PDF File

SSP4N60AS
SSP4N60AS

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.
) @ VDS = 600V Lower RDS(ON) : 2.
037 Ω (Typ.
) SSP4N60AS BVDSS = 600 V RDS(on) = 2.
5 Ω ID = 4 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds 2 O 1 O 1 O 3 O o Value 600 4 2.
5 1 O Units V A A V mJ A mJ V/ns W W/ C o 16 + _ 30 262 4 10 3.
0 100 0.
8 - 55 to +150 o C 300 Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -Max.
1.
25 -62.
5 o Units C/W Rev.
B ©1999 Fairchild Semiconductor Corporation SSP4N60AS Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 600 -2.
0 -----------------0.
68 ------3.
32 545 63 25 14 16 49 22 25 4 11.
9 --4.
0 100 -100 25 250 2.
5 -710 75 30 40 45 110 55 34 --nC ns pF µA Ω Ω V V nA N-CHANNEL POWER M...


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