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DU2820S

Tyco Electronics
Part Number DU2820S
Manufacturer Tyco Electronics
Description RF MOSFET Power Transistor/ 2OW/ 28V 2 - 175 MHz
Published Apr 3, 2005
Detailed Description --= --=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device ...
Datasheet PDF File DU2820S PDF File

DU2820S
DU2820S


Overview
--= --=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices DU2820S Absolute Maximum Ratings at 25°C Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 1 Symbol V 0s V GS 4,s p rJ TJ T STG 6JC 1 Rating 65 20 24 62.
5 200 -55 to +150 2.
8 t Units V V A W “C “C “Cl-W 1 J 1 4.
04 1 4.
55 7.
39 [ I X59 .
259 1 I .
l79 291 I 1 K L 1 6.
58 1 .
I0 1 1 x5 1 404 1 Jo6 Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltaae Leakage Current Leakage Current at 25°C Symbol BV.
.
,, ‘ass ‘GSS V 0sr-v GM C 15s C OS5 C RSS GP ‘70 VSWR-T 13 60 2.
0 500 Min 65 Max 1.
0 1.
0 6.
0 45 40 a 3O:l Units V mA fl V mS pF pF PF dB % V,.
=O.
O V, I,,=50 v,,=28.
0 v, v,,=o.
o mA v v Test Conditions vGs=20.
0 v.
v,,=o.
o Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load MismatchTolerance Specifications VDs=l 0.
0 V, IDS=1 00.
0 mA V&O.
0 v,,=28.
0 V,,=28.
0 V,,=28.
0 V, 1,,=100.
0 mA, AV,,=l v, F=l .
o MHZ V, F=l .
O MHz V, F=l .
O MHz mA, P,,f20 W, F=175 MHz MHz MHz .
O V, 80 ps Pulse vD,=2a.
o V, I,,=100 v,,=28.
0 v,,=28.
0 v, I,,=100 mA, PO,=20 W, F=l75 V.
I,,=1 00 mA, P,,1=;20 W, F=l75 Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel.
Fax (800) (800) 366-2266 618-8883 m Asia/Pacific: Tel.
Fax t81 +81 (03) (03) 3226-1671 3226-1451 n Europe: Tel.
Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, 2OW, 28V DU2820S v2.
00 Typical Broadband Performance Curves GAIN vs FREQUENCY 20 EFFICIENCY vs FREQUENCY W V,,=28 V I,,=1 00 mA Poe20 V,,=28 V I,,=1 00 mA PO,,,.
=20 W 25 s z.
t20 s 15 - .
10 0 25 50 FREQUENCY 1W 150 2cQ 0 25 (MHz) 50 FREQUE...


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