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DU28200

Tyco Electronics
Part Number DU28200
Manufacturer Tyco Electronics
Description RF MOSFET Power Transistor/ 2OOW/ 28V 2 - 175 MHz
Published Apr 3, 2005
Detailed Description an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Struct...
Datasheet PDF File DU28200 PDF File

DU28200
DU28200

Overview
an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.
00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance ( V,, VOS ‘DS ( 65 20 20 I v V A I 1 P, TJ T STG / 389 200 -65 to +150 1 W “C “C 1 Electrical Characteristics Parameter at 25°C Test Conditions Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current 1 Gate Threshold Voltage FonvardTransconductance Input Capacitance Output Capacitance ( Reverse Capacitance Power Gain Drain Efficiency Load MismatchTolerance * Per Side Specifications BVDss ‘cm ‘GSS I vG,rr,, GM CISS COSS I CFSS GP 65 5.
0 5.
0 V n-IA pA 1 v S pF pF 1 pF dB % - V,,=O.
O V, I,,=250 mA V,,=28.
0 V, V,,=O.
O V‘ v,,=20.
0 v, V,stO.
O v I v,,=~o.
ov, V,,=lO.
O 1 2.
0 2.
5 - 1 6.
0 225 200 1,,=500.
0 mA V, I,,=50 A, ~v,,=l .
O V, 80~ I Pulse’ Vr,,=28.
0 V, F=l .
OMHz’ V,,=28.
0 V, F=l .
O MHz’ 1 V,,=28.
0 V, F=l.
O MHz’ V,,=28.
0 V, I,,=1 000 mA, Pe~200.
0 W, F=l75 MHz I 1 13 55 - ( 40 lo:1 % VSWR-T V,,=28.
0 V.
I,,=1 000 mA, P,, -200.
0 W, F=175 MHz V-,=28.
0 V.
I,,=1000 mA.
P,,s200.
0 W, F=175 MHz Subject to Change Without Notice.
RF MOSFET Power Transistor, 2OOW, 28V DU28200M v2.
00 Typical Broadband Performance Curves GAIN vs FREQUENCY 30 V&3 V l,o=lOO mA EFFICIENCY W 6or vs FREQUENCY mA P,,=200 W P,f200 VDD=28 V I,,=1000 10 -I 25 50 50 100 150 200 25 50 loo FRECXJENCY (MHz) 150 200 FREQUENCY (MHz) POWER OUTPUT V,,=28 300 vs POWER INPUT V IDp=l 000 mA 100 MHz MHz z 5 P 5 a cl0 ; 250 30 MHz 200 200 150 100 f f .
50 0 0.
5 1 2 3 4 5 POWER INPUT (W) RF MOSFET Power Transistor, 2OOW, 28V DU28200M v2.
00 Typical Devi...


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