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DTC125TUA

Rohm
Part Number DTC125TUA
Manufacturer Rohm
Description NPN 100mA 50V Digital Transistor
Published Apr 3, 2005
Detailed Description DTC125TUA NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet lOutline Parameter VCEO IC R...
Datasheet PDF File DTC125TUA PDF File

DTC125TUA
DTC125TUA


Overview
DTC125TUA NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet lOutline Parameter VCEO IC R1 Value 50V 100mA 200kΩ SOT-323 SC-70 　 　 for 　 　 　 　 　 　 d lFeatures 1) Built-In Biasing Resistor e 2) Built-in bias resistors enable the configuration of d 　an inverter circuit without connecting external 　input resistors (see inner circuit) .
n s 3) Only the on/off conditions need to be set e n 　for operation, making the circuit design easy.
4) Complementary PNP Types: DTA125T series (UMT3) 　 　 　 　 　　　　　　　　 lInner circuit RecoemwmDesig lApplication INVERTER, INTERFACE,DRIVER Not N lPackaging specifications 　　　　　　　　　　　　　　　　　　　　　　 Part No.
Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.
(pcs) Marking DTC125TUA SOT-323 (UMT3) 2021 T106 180 8 3000 0A 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
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002 DTC125TUA 　 　 　 　　 　 　 　 　 　 　 　 　 　 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage r Collector current Power dissipation fo Junction temperature Range of storage temperature VEBO 5 V IC*1 100 mA PD*2 200 mW Tj 150 ℃ Tstg -55 to +150 ℃ ded lElectrical characteristics (Ta = 25°C) n s Parameter Symbol Conditions e n Collector-base breakdown m ig voltage BVCBO IC = 50μA Collector-emitter breakdown s voltage BVCEO IC = 1mA m e Emitter-base breakdown voltage o Collector cut-off current c D Emitter cut-off current e Collector-emitter saturation voltage w DC current gain R e Input resistance BVEBO ICBO IEBO VCE(sat) hFE R1 IE = 50μA VCB = 50V VEB = 4V IC = 0.
5mA, IB = 0.
05mA VCE = 5V, IC = 1mA - ot N Transition frequency f *1 T VCE = 10V, IE = -5mA, f = 100MHz N*1 Cha...


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