Digital transistors - Rohm
Description
DTB133HK / DTB133HS
Transistors
Digital transistors (built-in resistors)
DTB133HK / DTB133HS
!Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated.
3) Only the on/off conditions need to be set for operation, making device design easy.
4) Higher mounting densities can be achieved.
!External dimensions (Units : mm)
DTB133HK
(1)
0.
4
(3)
1.
6 2.
8
0.
15
0.
3to0.
6
0to0.
1
Each lead has same dimensions
ROHM : SMT3 EIAJ : SC-59
(1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain)
!Absolute maximum ratings (Ta = 25°C)
Parameter Supply voltage Input voltage Output current DTB133HK Power dissipation DTB133HS Junction temperature Storage temperature Symbol VCC VI IC Pd Tj Tstg Limits −50 −20 6 −500 200 300 150 −55~150 Unit V V mA mW °C °C
(15Min.
) 3
DTB133HS
4 2
3Min.
0.
45
2.
5 5 (1) (2) (3)
0.
5 0.
45
0.
8
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
!Package, marking, and packaging specifications
Part No.
Package Marking Packaging code Basic ordering unit (pieces) DTB133HK SMT3 G98 T146 3000 DTB133HS SPT TP 5000
!Circuit schematic
IN
R1 R2
OUT
GND (+) IN GND (+) OUT
!Electrical characteristics (Ta = 25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min.
−2 56 2.
31 2.
4 Typ.
−0.
1 3.
3 3 200 Max.
−0.
3 −0.
3 −2.
4 −0.
5 4.
29 3.
7 Unit V V mA µA kΩ MHz Conditions VCC = −5V , IO = −100µA VO = −0.
3V , IO = −20mA IO = −50mA , II = −2.
5mA VI = −5V VCC = −50V , VI = 0V IO = −50mA , VO = −5V VCE = −10V , IE = 5mA , f = 100MHz
1.
1
0.
95 0.
95 1.
9 2.
9
(2)
Taping specifications
Transition frequency
∗ Transition frequency of the device.
∗
...
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