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DSF21035SV32

Dynex Semiconductor
Part Number DSF21035SV32
Manufacturer Dynex Semiconductor
Description Fast Recovery Diode
Published Apr 3, 2005
Detailed Description DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 Januar...
Datasheet PDF File DSF21035SV32 PDF File

DSF21035SV32
DSF21035SV32


Overview
DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.
4 DS4176-2.
0 January 2000 APPLICATIONS s Freewheel Diode s Antiparallel Diode s Inverters s Choppers KEY PARAMETERS VRRM 3500V IF(AV) 3000A IFSM 20000A Qr 1500µC trr 6.
0µs FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 3500 3400 3200 3000 Conditions DSF21035SV35 DSF21035SV34 DSF21035SV32 DSF21035SV30 VRSM = VRRM + 100V Lower voltage grades available.
Outline type code: V.
See package outlines for further information.
CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 3000 4710 4480 A A A Parameter Conditions Max.
Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 1970 3100 2845 A A A 1/7 DSF21035SV SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing 1.
28 x 106 A2s 2.
0 x 106 16 A2s kA Conditions Max.
20 Units kA THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 40.
0kN with mounting compound On-state (conducting) Double side Single side -55 36.
0 0.
015 0.
002 0.
004 150 175 44.
0 o Min.
dc Anode dc - Max.
0.
0075 0.
015 Units o C/W o C/W C/W C/W C/W o o Rth(c-h) Thermal resistance - case to heatsink o Tvj Tstg - Virtual junction temperature Storage temperature range Clamping force C C o kN CHARACTERISTICS Symbol VFM IRRM trr QRA1 IRM K VTO rT VFRM Forward voltage Peak reverse curr...


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