DatasheetsPDF.com

2SD2526

Part Number	2SD2526
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching ...
Datasheet	2SD2526 PDF File

Overview

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A) · Complementary to 2SB1641 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 100 7 5 8 0.
5 1.
8 150 −55 to 150 Unit V V V A A W °C °C Equivalent...

Similar Datasheet

2SD2500 Silicon NPN Transistor - Toshiba Semiconductor
2SD2500 SILICON POWER TRANSISTOR - SavantIC
2SD2500 NPN Transistor - INCHANGE
2SD2504 Silicon NPN epitaxial planar type Transistor - Panasonic Semiconductor
2SD250A Silicon NPN Power Transistors - Inchange Semiconductor
2SD2524 Power Transistor - Inchange Semiconductor
2SD2525 Silicon NPN Triple Diffused Type Transistor - Toshiba
2SD2526 Silicon NPN Transistor - Toshiba Semiconductor
2SD2527 Silicon NPN Transistor - Panasonic Semiconductor
2SD2528 Silicon NPN Transistor - Panasonic Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)