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2SD2466

Panasonic Semiconductor
Part Number 2SD2466
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD2466, 2SD2466A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB160...
Datasheet PDF File 2SD2466 PDF File

2SD2466
2SD2466


Overview
Power Transistors 2SD2466, 2SD2466A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1604 Unit: mm s Features q q q (TC=25˚C) Ratings 40 50 20 40 5 20 10 40 2 150 –55 to +150 Unit V Parameter Collector to base voltage Collector to 2SD2466 2SD2466A 2SD2466 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.
1±0.
2 8.
0±0.
2 Solder Dip s Absolute Maximum Ratings 15.
0±0.
3 3.
0±0.
2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2 13.
7–0.
2 +0.
5 1.
2±0.
15 1.
45±0.
15 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4 2.
6±0.
1 0.
7±0.
1 emitter voltage 2SD2466A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2466 2SD2466A 2SD2466 2SD2466A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.
1A VCE = 2V, IC = 3A IC = 10A, IB = 0.
33A IC = 10A, IB = 0.
33A VCE = 10V, IC = 0.
5A, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 3A, IB1 = 0.
1A, IB2 = – 0.
1A, VCC = 20V 120 200 0.
3 0.
4 0.
1 20 40 45 90 260 0.
6 1.
5 V V MHz pF µs µs µs min typ max 50 50 50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 80 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.
0W) TC=25˚C IB=100mA 90mA 80mA 70mA 6 60mA 50mA 40mA 4 30mA 20mA 2 10 0 0 ...


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