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2SD2406

Toshiba Semiconductor
Part Number 2SD2406
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications 2SD2406 Unit: mm • High power...
Datasheet PDF File 2SD2406 PDF File

2SD2406
2SD2406

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications 2SD2406 Unit: mm • High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCBO VCEO VEBO IC IB PC 80 V 80 V 5V 4A 0.
4 A 25 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) m...


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