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2SD2247

Part Number	2SD2247
Manufacturer	Hitachi Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD2247 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3...
Datasheet	2SD2247 PDF File

Overview

2SD2247 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1.
Emitter 2.
Collector 3.
Base 3 2 1 2SD2247 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 55 50 5 100 –100 200 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 55 50 5 — — 1 Typ — — — — — — — 0.
67 — 1.
8 Max — — — 0.
5 0.
5 320 0.
2 0.
75 100 3.
5 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 40 V, IE = 0 VEB = 4 V, IC = 0 VCE = 12 V, IC = 2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation volt...

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