Silicon PNP epitaxial planer type Transistor - Panasonic Semiconductor
Description
Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
1.
6±0.
15
Unit: mm
s Features
q q q
0.
4
0.
8±0.
1
0.
4
0.
2–0.
05 0.
15–0.
05
+0.
1
High collector to emitter voltage VCEO.
Low noise voltage NV.
SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.
6±0.
1
1.
0±0.
1
0.
5
1
0.
5
3
2
0.
75±0.
15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD2240 2SD2240A 2SD2240 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
0.
45±0.
1 0.
3
(Ta=25˚C)
Ratings 150 185 150 185 5 100 50 125 125 –55 ~ +125 Unit V
emitter voltage 2SD2240A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package
Marking symbol : P(2SD2240) L(2SD2240A)
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SD2240 2SD2240A
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob NV
*
Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT
min
typ
0 to 0.
1
0.
2±0.
1
max 1
+0.
1
Unit µA V V
150 185 5 130 330 1 150 2.
3 150
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage
*1h
VCE(sat)
V MHz pF mV
FE1
Rank classification
Rank hFE R 130 ~ 220 2SD2240 2SD2240A PR LR S 185 ~ 330 PS LS
Marking Symbol
1
Transistor
PC — Ta
150 120 Ta=25˚C 125 100
2SD2240, 2SD2240A
IC — VCE
120 VCE=10V 100 25˚C
IC — VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
100
80
75
60
IB=2.
0mA 1.
8mA 1.
6mA 1.
4mA 1.
2mA 1.
0mA 0.
8mA 0.
6mA 0.
4mA
Ta=75˚C 80
–25˚C
...
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