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2SD2225

Part Number	2SD2225
Manufacturer	Panasonic Semiconductor
Published	Apr 3, 2005
Description	Silicon NPN epitaxial planer type Transistor
Detailed Description	Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 6.9±0.1 0...
Datasheet	2SD2225 PDF File

Overview

Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 6.
9±0.
1 0.
15 Unit: mm 1.
05 2.
5±0.
1 ±0.
05 (1.
45) 0.
8 0.
5 4.
5±0.
1 0.
45–0.
05 2.
5±0.
1 0.
7 4.
0 s Features q q q 0.
65 max.
1.
0 1.
0 High collector to emitter voltage VCEO of 120V.
Optimum for low-frequency driver amplification.
Allowing supply with the radial taping.
0.
2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 120 120 5 1 0.
5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT2 Type Package 1.
2±0.
1 0.
65 max.
0.
1 0.
45+ – 0.
05 Printed circuit board: Copper foil area of thickness of 1.
7mm for the collector portion or more, and the board +0.
1 s Absolute Maximum Ratings 0.
45–0.
05 +0.
1 (Ta=25˚C) 2.
5±0.
5 2.
5±0.
5 (HW type) s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage (Ta=25˚C) Symbol VCEO VEBO hFE1 *1 Conditions IC = 0.
1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 VCE = 5V, IC = 100mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 200MHz*2 VCB = 10V, IE = 0, f = 1MHz min 120 5 90 50 100 typ max 14.
5±0.
5 Unit V V 330 Forward current transfer ratio hFE2 hFE3 VCE(sat) VBE(sat) fT Cob Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance 0.
15 0.
9 200 11.
5 *2 1 1.
2 V V MHz 20 pF Pulse measurement *1h FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 S 185 ~ 330 Rank hFE1 1 Transistor PC — Ta 1.
2 200 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.
7mm for the colle...

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