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2SD2206

Toshiba Semiconductor
Part Number 2SD2206
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2206 Micro Motor Drive, Hammer D...
Datasheet PDF File 2SD2206 PDF File

2SD2206
2SD2206


Overview
2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 100 100 8 2 3 0.
5 900 150 −55 to 150 V V V A A mW °C °...



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