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2SD2150

Rohm
Part Number 2SD2150
Manufacturer Rohm
Published Apr 3, 2005
Description Transistor
Detailed Description Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Ex...
Datasheet PDF File 2SD2150 PDF File

2SD2150
2SD2150


Overview
Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat).
VCE(sat) = 0.
2V(Typ.
) （IC / IB = 2A / 0.
1A） 2) Excellent current gain characteristics.
3) Complements the 2SB1424.
zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current 3 IC 5 Collector power dissipation PC 0.
5 2 Junction temperature Tj 150 Storage temperature Tstg ∗1 Single pulse Pw=10ms ∗2 Mounted on a 40×40×0.
7mm Ceramic substrate.
−55 to +150 Unit V V V A (DC) A (Pulse) ∗1 W W ∗2 °C °C zDimensions(Unit : mm) 2SD2150 4.
5+−00.
.
21 1.
6±0.
1 1.
5−+00.
.
12 0.
5±0.
1 4.
0±0.
3 2.
5+−00.
.
21 1.
0±0.
2 (1) (2) (3) 0.
4±0.
1 1.
5±0.
1 0.
5±0.
1 3.
0±0.
2 0.
4±0.
1 1.
5±0.
1 0.
4−+00.
.
015 (1) Base ROHM : MPT3 (2) Collector EIAJ : SC-62 (3) Emitter ∗Abbreviated symbol: CF ∗ Denotes hFE zElect...


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