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2SD2129

Part Number	2SD2129
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2129 2SD2129 High-Power Switching Applications Ham...
Datasheet	2SD2129 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2129 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.
5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 5 Base current IB 0.
5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.
0 W 20 JEDEC JEITA ― SC-67 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-10R1...

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