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2SD2115

Hitachi Semiconductor
Part Number 2SD2115
Manufacturer Hitachi Semiconductor
Description Silicon NPN Epitaxial Planar Transistor
Published Apr 3, 2005
Detailed Description 2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S...
Datasheet PDF File 2SD2115 PDF File

2SD2115
2SD2115

Overview
2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1.
Base 2.
Collector 3.
Emitter 4.
Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating 150 60 5 2 2.
5 18 150 –55 to +150 Unit V V V A A W °C °C 2SD2115(L)/(S) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 60 5 — 150 — — — Typ — — — — — — — — Max — — — 10 — 0.
8 1.
3 0.
6 V V µs Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1.
5 A*1 I C = 1.
5 A, IB = 0.
05 A*1 I C = 1.
5 A, IB = 0.
05 A*1 I C = 1.
5 A, IB1 = –IB2 = 50 mA Collector to emitter breakdow...


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