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2SD2101

Hitachi Semiconductor
Part Number 2SD2101
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collec...
Datasheet PDF File 2SD2101 PDF File

2SD2101
2SD2101

Overview
...tor 3.
Emitter 12 3 3 kΩ (Typ) 150 Ω (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg 1 Rating 200 200 7 10 15 2 30 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 200 200 170 7 — — 1500 — — — — Typ — — — — — — — — — — — Max — — — — 10 50 — 1.
5 3.
0 2.
0 3.
5 V V Unit V V V V µA Test conditions I C = 0.
1 mA, IE = 0 I C = 25 m...


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