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2SD2079

Part Number	2SD2079
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2079 2SD2079 High-Power Switching Applications Ham...
Datasheet	2SD2079 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2079 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.
5 V (max) • Complementary to 2SB1381.
Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 100 100 7 5 8 0.
5 2.
0 30 150 −55 to 150 V V V A A W °C °C JEDEC ― ...

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