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2SD1796

Sanken electric
Part Number 2SD1796
Manufacturer Sanken electric
Description Silicon NPN Triple Diffused Planar Transistor
Published Apr 3, 2005
Detailed Description Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ...
Datasheet PDF File 2SD1796 PDF File

2SD1796
2SD1796


Overview
Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1796 60±10 60±10 6 4 0.
5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD1796 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=–0.
2A VCB=10V, f=1MHz 2SD1796 10max 10max 60±10 2000min 1.
5max 60typ 45 typ V MHz pF 13.
0min Equivalent circuit B C (3 k Ω)(1 5 0 Ω) E Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.
0±0.
2 10.
1±0.
2 4.
2±0.
2 2.
8 c0.
5 µA V 16.
9±0.
3 8.
4±0.
2 mA 1.
35±0.
15 1.
35±0.
15 0.
85 +0.
2 -0.
1 0.
45 +0.
2 -0.
1 2.
54 2.
2±0.
2 2.
4±0.
2 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (µs) 1.
0typ tstg (µs) 4.
0typ tf (µs) 1.
5typ 2.
54 3.
9 B C E ±0.
2 0.
8±0.
2 a b ø3.
3±0.
2 Weight : Approx 2.
0g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical) 0m A 1.
0m A 0 .
8 m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 4 4 =2 IB Collector Current I C (A) 0.
5m A 2 Collector Current I C (A) 3 0 .
6 m A 3 p) ase Tem 25˚C (C 4A 1 0.
3mA 1 0 0 1 2 3 4 0 0.
2 0.
5 1 5 10 50 100 0 0 125˚C 1 1 Base-Emittor Voltage V B E (V) –30˚C (C I C= 2 A I C =1 A (Cas I C= 3 A ase Tem 2 I C= 2 e Tem 0.
4 mA p) p) 2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) h FE – I C Characteristics (Typical) (V C E =4V) 20000 D C Cur r ent åGai n h FE 10000 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 20000 10000 5000 125 ˚C θ j-a – t Characteristics θ j- a ( ˚ C/W) Transient Thermal Resistance 5 Typ 5000 DC Cur rent åGain h FE 1000 500 1000 500 ˚C 25 0˚C –3 ...


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