Silicon NPN Transistor - Panasonic Semiconductor
Description
Transistor
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
Unit: mm
For low-frequency amplification
0.
65±0.
15
2.
8 –0.
3
+0.
2
1.
5 –0.
05
+0.
25
0.
65±0.
15
2.
9 –0.
05
1.
9±0.
2
+0.
2
q
q
Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000.
A shunt resistor is omitted from the driver.
(Ta=25˚C)
Ratings 30 60 25 50 5 750 500 200 150 –55 ~ +150 Unit V
0.
95
1
0.
95
3 0.
4 –0.
05
+0.
1
2
1.
45
s Features
1.
1 –0.
1
Collector to base voltage Collector to
2SD1478 2SD1478A 2SD1478 VCBO VCEO VEBO ICP IC PC Tj Tstg
emitter voltage 2SD1478A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol : 2N(2SD1478) 2O(2SD1478A) Internal Connection
C B
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1478 2SD1478A 2SD1478 2SD1478A
0 to 0.
1
Parameter
Symbol
0.
1 to 0.
3 0.
4±0.
2
0.
8
s Absolute Maximum Ratings
(Ta=25˚C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.
5mA*2 IC = 500mA, IB = 0.
5mA*2 VCB = 10V, IE = –50mA, f = 200MHz 200
*2
E
min
typ
max 100 100
0.
16 –0.
06
+0.
2
+0.
1
Unit nA nA V
30 60 25 50 5 4000 20000 2.
5 3.
0
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency
*1h FE1
V V MHz
Rank classification
Rank hFE1 Q R 4000 ~ 10000 8000 ~ 20000 2SD1478 2SD1478A 2NQ 2OQ 2NR 2OR
Pulse measurement
Marking Symbol
1
Transistor
PC — Ta
240 1000 300
2SD1478, 2SD1478A
IC — VCE
Collector to emitter saturation voltag...
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