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2SD1376

Hitachi Semiconductor
Part Number 2SD1376
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline ...
Datasheet PDF File 2SD1376 PDF File

2SD1376
2SD1376

Overview
2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1.
Emitter 2.
Collector 3.
Base ID 6 kΩ (Typ) 0.
5 kΩ (Typ) 1 1 2 3 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C (peak) PC * Tj Tstg ID* 1 1 Rating 120 120 7 1.
5 3.
0 20 150 –55 to +150 1.
5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 2000 — — — — — — — Typ — — — — — — — — — — 0.
5 2.
0 Max — — 100 10 30000 1.
5 2.
0 2.
0 2.
5 3.
0 — — V V V V V µs µs Unit V V µA µA Test conditions I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.
5 A, IB = 1.
5 mA...


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