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2SD1275

Panasonic Semiconductor
Part Number 2SD1275
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For power amplificatio...
Datasheet PDF File 2SD1275 PDF File

2SD1275
2SD1275

Overview
Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington 0.
7±0.
1 For power amplification Complementary to 2SB949 and 2SB949A 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 4.
2±0.
2 Unit: mm q q 16.
7±0.
3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 80 60 80 5 4 2 35 2 150 –55 to +150 Unit V 7.
5±0.
2 s Features φ3.
1±0.
1 4.
0 14.
0±0.
5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1275 2SD1275A 2SD1275 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.
4±0.
1 1.
3±0.
2 Solder Dip 0.
8±0.
1 0.
5 –0.
1 +0.
2 2.
54±0.
25 5.
08±0.
5 emitter voltage 2SD1275A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1275 2SD1275A 2SD1275 2SD1275A 2SD1275 2SD1275A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.
5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = –8mA, VCC = 50V min typ max 1 1 2 2 2 Unit mA mA mA V 60 80 1000 2000 10000 2.
8 2.
5 20 0.
5 4 1 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 V V MHz µs µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC — Ta 50 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C ...


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