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2SD1262

Panasonic Semiconductor

Silicon PNP Transistor - Panasonic Semiconductor


2SD1262
2SD1262

PDF File 2SD1262 PDF File



Description
Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 10.
0±0.
3 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings 60 80 60 80 7 12 8 45 1.
3 150 –55 to +150 Unit V 1.
5±0.
1 1.
5max.
10.
5min.
2.
0 1.
1max.
0.
8±0.
1 0.
5max.
2.
54±0.
3 5.
08±0.
5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1262 2SD1262A 2SD1262 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 6.
0±0.
3 10.
0±0.
3 emitter voltage 2SD1262A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 1.
5–0.
4 3.
0–0.
2 V A A W ˚C ˚C 2.
0 4.
4±0.
5 0.
8±0.
1 2.
54±0.
3 R0.
5 R0.
5 1.
1 max.
0 to 0.
4 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1262 2SD1262A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA IC = 4A, IB = 8mA VCE = 10V, IC = 0.
5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V 20 0.
5 4 1 60 80 1000 500 1.
5 2 V V MHz µs µs µs 10000 min typ max 100 100 2 Unit µA mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification R Q P 1000 to 2500 2000 to 5000 4000 to 10000 Internal Connection B C Rank hFE1 E 4.
4±0.
5 14.
7±0.
5 +0.
4 +0 1 Power Transis...



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