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2SD1221

Toshiba Semiconductor
Part Number 2SD1221
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application...
Datasheet PDF File 2SD1221 PDF File

2SD1221
2SD1221

Overview
TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector saturation voltage : VCE (sat) = 0.
4 V (typ.
) (IC = 3 A, IB = 0.
3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 3 A Base current IB 0.
5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 20 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-7J1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 0.
36 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2010-05-19 Electrical Characteristics (Ta = 25°C) 2SD1221 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 60 V, IE = 0 IEBO VEB = 7 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 0.
5 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 3 A IC = 3 A, IB = 0.
3 A VCE = 5 V, IC = 0.
5 A VCE = 5 V, IC = 0.
5 A VCB = 10 V, IE = 0, f = 1 MHz Min Typ.
Max Unit ― ― 100 μA ― ― 100 μA 60 ― ― V 60 ― 300 ― 20 ― ― ― 0.
4 1.
0 V ...


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