NPN TRANSISTOR - Rohm
Description
Power transistor (60V, 3A)
2SC5825
zFeatures
1) High speed switching.
(Tf : Typ.
: 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ.
: 200mV at IC = 2A, IB = 0.
2mA)
3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SA2073
zApplications Low frequency amplifier High speed switching
zStructure NPN Silicon epitaxial planar transistor
zPackaging specifications
Type 2SC5825
Package Code Basic ordering unit (pieces)
Taping TL 2500
zDimensions (Unit : mm)
CPT3
(SC-63)
(1) Base (2) Collector (3) Emitter
Each lead has same dimensions Abbreviated symbol : C5825
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
Continuous Pulsed
IC ICP
Power dissipation
PC
Junction temperature
Range of storage temperature
∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land ∗3 Tc=25°C
Tj Tstg
Limits 60 60 6 3 6 1.
0 10.
0 150
−55 to 150
Unit V V V A A ∗1 W ∗2 W ∗3 °C °C
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rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
1/3
2009.
12 - Rev.
B
2SC5825
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Symbol BVCEO BVCBO BVEBO
ICBO IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transition frequency
fT
Corrector output capacitance
Cob
Turn-on time Storage time Fall time
Ton Tstg Tf
∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement cicuits
Min.
60 60 6 − − −
120
−
−
− − −
Typ.
− − − − −
200
−
200
20
50 150 30
Max.
− − − 1.
0 1.
0
500
390
−
−
− − −
Unit V V V µA µA mV
−
MHz
pF
ns ns ns
Condition
IC=1mA IC=100µA IE=100µA VCB=40V VEB=4V IC=2A IB=200mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=3A IB1=300mA IB2= −300mA VCC 25V
∗1 ∗1
∗2
zhFE RANK
Q 120−270
R 180−390
Data She...
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