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2SC5785

Toshiba Semiconductor
Part Number 2SC5785
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 High-Speed Switching Applications DC-DC Converter Applica...
Datasheet PDF File 2SC5785 PDF File

2SC5785
2SC5785


Overview
2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.
2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.
12 V (max) High-speed switching: tf = 25 ns (typ.
) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating 20 10 7 2.
0 3.
5 200 2.
0 1.
0 150 −55 to 150 Unit V V V A mA W °C °C JEDEC JEITA TOSHIBA ― SC-62 2-5K1A Weight: 0.
05 g (typ.
) Note 1: Mounted on FR4 board (glass epoxy, 1.
6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 20 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.
2 A VCE = 2 V, IC = 0.
6 A IC = 0.
6 A, IB = 12 mA IC = 0.
6 A, IB = 12 mA See Figure 1 circuit diagram.
VCC ∼ − 6 V, RL = 10 Ω IB1 = −IB2 = 12 mA Min   10 400 200      Typ.
       60 215 25 Max 100 100  1000  0.
12 1.
10    ns V V Unit nA nA V 1 2001-12-17 2SC5785 Marking VCC 20 µs IB1 IB1 RL 3E Output Input IB2 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart 2 2001-12-17 2SC5785 IC – VCE 2.
4 60 2 40 30 20 10 8 1.
6 6 4 IB = 2 mA 0.
8 Common emitter Ta = 25°C Single nonrepetitive pulse 0.
4 0.
8 1.
2 10000 hFE – IC Common emitter VCE = 2 V Single nonrepetitive pulse Ta = 100°C (A) hFE DC current gain 1000 Collector current IC 1.
2 25 100 −55 0.
4 ...


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