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2SC5713

Part Number	2SC5713
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applica...
Datasheet	2SC5713 PDF File

Overview

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.
5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.
15 V (max) High-speed switching: tf = 50 ns (typ.
) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 15 10 7 4 7 400 1.
0 2.
...

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