NPN TRANSISTOR - Hitachi Semiconductor
Description
2SC5554
Silicon NPN Epitaxial VHF / UHF wide band amplifier
ADE-208-692 (Z) 1st.
Edition Oct.
1998 Features
• Super compact package; (1.
4 × 0.
8 × 0.
59mm) • Capable low voltage operation ; (V CE = 1V)
Outline
MFPAK
3
1 2
1.
Emitter 2.
Base 3.
Collector
Note: Marking is “YH-”.
2SC5554
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 9 1.
5 20 80 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Symbol I CBO I CEO I EBO hFE Cob Min — — — 50 — Typ — — — 120 0.
6 Max 10 1 10 250 0.
9 Unit µA mA µA V pF Test Conditions VCB = 15V , IE = 0 VCE = 9V , RBE = ∞ VEB = 1.
5V , IC = 0 VCE = 1V , IC = 5mA VCB = 1V , IE = 0 f = 1MHz Gain bandwidth product Power gain fT PG 3.
5 9 7 12 — — GHz dB VCE = 1V , IC = 5mA VCE = 1V, IC = 5mA f = 900MHz Noise figure NF — 1.
4 3 dB VCE = 1V, IC = 5mA f = 900MHz
2
2SC5554
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 160 DC Current Transfer Ratio h FE 200 DC Current Transfer Ratio vs.
Collector Current VCE = 1 V
120
80
100
40
0 0 50 100 150 200 1 2 5 10 20 50 100
Ambient Temperature Ta (°C)
Collector Current I C (mA)
(pF)
1.
0
Collector Output Capacitance vs.
Collector to Base Voltage Gain Bandwidth Product f T (GHz)
IE = 0 f = 1MHz
10
Gain Bandwidth Product vs.
Collector Current VCE = 1 V
Collector Output Capacitance Cob
0.
8
8
0.
6
6 4
0.
4
0.
2
2
0 0.
1
0 1 2 5 10 20 50 100
0.
2
0.
5
1
2
5
10
Collector to Base Voltage V CB (V)
Collector Current I C (mA)
3
2SC5554
Power Gain vs.
Collector Current 20 VCE = 1 V 16 Power Gain PG (dB) f = 900MHz Noise Figure NF (dB) 4 5 VCE = 1 V f = 900MHz Noise Figure vs.
Collector Current
12
3
...
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