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2SC5548A

Toshiba Semiconductor
Part Number 2SC5548A
Manufacturer Toshiba Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Switching Regulator App...
Datasheet PDF File 2SC5548A PDF File

2SC5548A
2SC5548A


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC5548A Unit: mm • High speed switching: tr = 0.
5 μs (max), tf = 0.
3 μs (max) (IC = 0.
8 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 40 (min) (IC = 0.
2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 600 V 400 V 7 V 2 A 4 0.
5 A 1.
0 W 15 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1999-04 1 2013-11-01 Electrical Characteristics (Ta = 25°C) 2SC5548A Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.
2 A IC = 0.
8 A, IB = 0.
1 A IC = 0.
8 A, IB = 0.
1 A ...


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