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2SC5319

Part Number	2SC5319
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • L...
Datasheet	2SC5319 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.
3dB (f = 2 GHz) • High gain: ⎪S21e⎪2 = 11.
5dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.
5 V Collector current IC 20 mA Base current IB 10 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C １，３ EMITTER Storage temperature range Tstg −55 to 125 °C ２ COLLECTOR ４ BASE Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/vol...

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