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2SC5108

Toshiba Semiconductor
Part Number 2SC5108
Manufacturer Toshiba Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 2SC5108 For VCO Application Unit: mm Absolute Maximum R...
Datasheet PDF File 2SC5108 PDF File

2SC5108
2SC5108


Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 2SC5108 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 10 V 3 V 15 mA 30 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
JEDEC ― operating temperature/current/voltage, etc.
) are within the JEITA ― absolute maximum ratings.
Please design the appropriate reliability upon reviewing the TOSHIBA 2-2H1A Toshiba Semiconductor Reliability Handbook (“Handling Weight: 2.
4 mg (typ.
) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1993-10 1 2014-03-01 2SC5108 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO VCB = 10 V, IE = 0 ⎯ IEBO VEB = 1 V, IC = 0 ⎯ hFE (Note 1) VCE = 5 V, IC = 5 mA 80 fT ⎪S21e⎪2 Cob Cre Cc・rbb’ VCE = 5 V, IC = 5 mA 4 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 ⎯ VCB = 5 V, IE = 0, f = 1 MHz (Note 2) ⎯ VCB = 5 V, IC = 3 mA, f = 30 MHz ⎯ ⎯ 1 μA ⎯ 1 μA ⎯ 240 6 ⎯ GHz 11 ⎯ dB 0.
7 ⎯ pF 0.
5 0.
9 pF 5.
5 15 ps Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking 2 2014-03-01 2SC5108 3 2014-03-01 ...



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