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2SC4935

Toshiba Semiconductor
Part Number 2SC4935
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4935 Power Amplifier Applications 2SC4935 Unit: mm • Go...
Datasheet PDF File 2SC4935 PDF File

2SC4935
2SC4935

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4935 Power Amplifier Applications 2SC4935 Unit: mm • Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VEBO IC IB PC 5V 3A 0.
3 A 2 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high JEITA SC-67 temperature/current/voltage and the significant change in TOSHIBA 2-10R1A temperature, etc.
) ...


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