NPN TRANSISTOR - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738F
2SC4738F
Audio Frequency General Purpose Amplifier Applications
· High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity: hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) · High hFE: hFE = 120~400 · Complementary to 2SA1832F · Small package
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
60 50 5 150 30 100 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Transition frequency Collector output capacitance
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (Note)
VCE = 6 V, IB = 2 mA
VCE (sat) IC = 100 mA, IB = 10 mA
fT VCE = 10 V, IC = 1 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1A
Weight: 2.
3 mg (typ.
)
Min Typ.
Max Unit ¾ ¾ 0.
1 mA ¾ ¾ 0.
1 mA
120 ¾ 400
¾ 0.
1 0.
25 V 80 ¾ ¾ MHz ¾ 2.
0 3.
5 pF
1 2003-03-27
2SC4738F
2 2003-03-27
2SC4738F
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
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